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We propose new designs of plasmonic modulators, which can be utilized fordynamic signal switching in photonic integrated circuits. We study performanceof plasmonic waveguide modulator with bismuth ferrite as an active material.The bismuth ferrite core is sandwiched between metal plates(metal-insulator-metal configuration), which also serve as electrodes so thatthe core changes its refractive index under applied voltage by means of partialin-plane to out-of-plane reorientation of ferroelectric domains in bismuthferrite. This domain switch results in changing of propagation constant andabsorption coefficient, and thus either phase or amplitude control can beimplemented. Efficient modulation performance is achieved because of high fieldconfinement between the metal layers, as well as the existence of mode cut-offsfor particular values of the core thickness, making it possible to control thesignal with superior modulation depth. For the phase control scheme, {\pi}phase shift is provided by 0.8-{\mu}m length device having propagation losses0.29 dB/{\mu}m. For the amplitude control, we predict up to 38 dB/{\mu}mextinction ratio with 1.2 dB/{\mu}m propagation loss. In contrast to previouslyproposed active materials, bismuth ferrite has nearly zero material losses, sobismuth ferrite based modulators do not bring about additional decay of thepropagating signal.

Bismuth ferrite as low-loss switchable material for plasmonic waveguide modulator