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The majority of silicon photonics is built on silicon-on-insulator (SOI)wafers while the majority of electronics, including CPUs and memory, are builton bulk silicon wafers, limiting broader acceptance of silicon photonics. Thisdiscrepancy is a result of silicon photonics's requirement for asingle-crystalline silicon (c-Si) layer and a thick undercladding for opticalguiding that bulk silicon wafers to not provide. While the undercladdingproblem can be partially addressed by substrate removal techniques, thecomplexity of co-integrating photonics with state-of-the-art transistors andreal estate competition between electronics and photonics remain problematic.We show here a platform for deposited GHz silicon photonics based onpolycrystalline silicon with high optical quality suitable for high performanceelectro-optic devices. We demonstrate 3 Gbps polysilicon electro-opticmodulator fabricated on a deposited polysilicon layer fully compatible withCMOS backend integration. These results open up an array of possibilities forsilicon photonics including photonics on DRAM and flexible substrates.

Deposited low temperature silicon GHz modulator