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Silicon nitride (Si3N4) ring resonators are critical for a variety ofphotonic devices. However the intrinsically high film stress of silicon nitridehas limited both the optical confinement and quality factor (Q) of ringresonators. We show that stress in Si3N4 films can be overcome by introducingmechanical trenches for isolating photonic devices from propagating cracks. Wedemonstrate a Si3N4 ring resonator with an intrinsic quality factor of 7million, corresponding to a propagation loss of 4.2 dB/m. This is the highestquality factor reported to date for high confinement Si3N4 ring resonators inthe 1550 nm wavelength range.

Overcoming Si3N4 film stress limitations for High Quality factor ring resonators