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We investigate the directive radiation at 1550 nm from an optical leaky wave antenna (OLWA) with semiconductor perturbations made of silicon (Si). We study the radiation pattern dependence on the physical dimensions, number of perturbations and carrier densities in these semiconductor perturbations through optical excitations at a visible wavelength, 625 nm. In this detailed theoretical study we show the correlation between the pump power absorbed in the perturbations, the signal guided in the waveguide and the radiation through leakage. To overcome the limited control of the radiation intensity through excess carrier generation in Si, we present a new design with the OLWA integrated with a Fabry-Pérot resonator (FPR). We provide analytical and numerical studies of the enhanced radiation performance of the OLWA antenna inside the FPR, and derive closed-form formulas accounting for LW reflection at the edges of the FPR. A discussion on the constructive and destructive radiation by the direct and reflected leaky waves in the FPR resonator is provided. Results shown in this paper exhibit 3 dB variation of the radiation and pave the way for further optimization and theoretical developments.

An optical leaky wave antenna with Si perturbations inside a resonator for enhanced optical control of the radiation