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We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of &gt;135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with &gt;40 dB/mm gain at 1570 nm, and passive waveguide losses &lt;2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation