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Significantly enhanced superbroadband near infrared emission has been realized in bismuth/aluminum doped high-silica zeolite derived nanoparticles. The emission intensity can be easily tailored by the introduction of aluminum. The luminescence lifetime can reach up to 695 micros. The results reveal that the existence of charge imbalance environment caused by [AlOV(4/2)](-) units in host materials is requisite to the formation of infrared-active Bi(+). The finding presents a feasible route to design high-efficient bismuth activated infrared luminescent nanoparticles. These bismuth doped nanoparticles may find applications as superbroadband near infrared nano optical sources.

Significantly enhanced superbroadband near infrared emission in bismuth/aluminum doped high-silica zeolite derived nanoparticles