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We report on reflection modulation results near 1.55 mum in InP-based two-dimensional photonic crystals. The fabrication technology uses a polymeric bonding technique to integrate the InP thin-slab onto a Silicon wafer. Reflectivity modulation greater than 90% is obtained by pumping at 810 nm with optical excitation densities of 15 muJ/cm(2). The resulting optical broadband modulation is based on the saturation of absorption of InGaAs quantum wells at a photonic mode frequency tunable by lithography.

High contrast reflection modulation near 1.55μm in InP 2D photonic crystals on silicon wafer