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Graphene has emerged as an ultrafast optoelectronic material for on-chipphotodetector applications. The 2D nature of graphene enables its facileintegration with complementary metal-oxide semiconductor (CMOS)microelectronics and silicon photonics, yet graphene absorbs only $\sim$2.3% oflight. Plasmonic metals can enhance the responsivity of graphenephotodetectors, but may result in CMOS-incompatible devices, depending on thechoice of metal. Here, we propose a plasmon-enhanced photothermoelectricgraphene detector using CMOS-compatible titanium nitride (TiN) on thesilicon-on-insulator (SOI) platform. The device performance is quantified byits responsivity, operation speed, and noise equivalent power. Its bandwidthexceeds 100$\,$GHz, and it exhibits a nearly flat photoresponse across thetelecom C-band. The photodetector responsivity is as high as 1.4$\,$A/W(1.1$\,$A/W external) at an ultra-compact length of 3.5$\,\mu$m, which is themost compact footprint reported for a graphene-based waveguide photodetector.Furthermore, it operates at zero-bias, consumes zero energy, and has anultra-low intrinsic noise equivalent power(NEP$\,$<$\,25\:\text{pW/}\sqrt{\text{Hz}}$)

Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride