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Terahertz time-domain spectroscopy is employed to investigatetemperature-dependent properties of bulk chalcopyrite crystals (CdGeP$_2$,ZnGeP$_2$ and CdSiP$_2$). The complex spectra provide the refraction andabsorption as a function of temperature, from which electron-phonon couplingand average phonon energies are extracted and linked to the mechanics of the A-and B-site cations. Also, AC conductivity spectra provide carrier densities andelectron scattering times, the temperature dependence of which is associatedwith unintentional shallow dopants. Temperature dependence of the scatteringtime is converted into carrier mobility and modeled with microscopic transportmechanisms such as polar optical phonon, acoustic phonons, deformationpotential, ionized impurity and dislocation scattering. Hence, analysis linksthe THz optical and electronic properties to relate microscopic carriertransport and carrier-lattice interactions.

Carrier transport and electron-lattice interactions of nonlinear optical crystals CdGeP$_2$, ZnGeP$_2$ and CdSiP$_2$