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We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavitywith a resonance near 1300 nm in the "original" telecom band. We concentrate onultimate-fast optical switching of the cavity resonance that is measured as afunction of pump-pulse energy. We observe that at low pump-pulse energies theswitching of the cavity resonance is governed by the instantaneous electronicKerr effect and is achieved within 300 fs. At high pump-pulse energies theindex change induced by free carriers generated in the GaAs start to competewith the electronic Kerr effect and reduce the resonance frequency shift. Wehave developed an analytic model which predicts this competition in agreementwith the experimental data. Our model includes a new term in theintensity-dependent refractive index that considers the effect of the probepulse intensity, which is resonantly enhanced by the cavity. We calculate theeffect of the resonantly enhanced probe light on the refractive index changeinduced by the electronic Kerr effect for cavities with different qualityfactors. By exploiting the linear regime where only the electronic Kerr effectis observed, we manage to retrieve the nondegenerate third order nonlinearsusceptibility for GaAs from the cavity resonance shift as a function ofpump-pulse energy.

Competition between electronic Kerr and free carrier effects in an ultimate-fast optically switched semiconductor microcavity