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Pumping n-type GaAs and InSb with ultrafast THz pulses having intensitieshigher than 150 MW/cm2 shows strong free carrier absorption saturation attemperatures of 300 K and 200 K respectively. If the energy imparted to thecarriers exceeds the bandgap, impact ionization processes can occur. Thedynamics of carrier cooling in GaAs and impact ionization in InSb weremonitored using THz-pump/THz probe spectroscopy which provides both sub-bandgapexcitation and probing, eliminating any direct optical electron-hole generationthat complicates the evaluation of results in optical pump/THz probeexperiments.

THz-pump -- THz-probe spectroscopy of semiconductors at high field strengths