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The conductivity effective masses of electrons and holes in Si are calculated for carrier temperatures from 1 to 3000 K. The temperature dependence of the electron mass is calculated by use of a phenomenological model of conduction-band nonparabolicity that has been fitted to experimental measurements of the dependence of the electron conductivity effective mass on carrier concentration. The hole mass is investigated by tight- binding calculations of the valence bands, which have been adjusted to match experimental values of the valence-band curvature parameters at the top of the valence band. The calculations are in excellent agree- ment with femtosecond-laser reflectivity measurements of the change in optical effective mass as hot carriers cool from 1550 to 300 K. © 2002 Optical Society of America OCIS codes: 160.4760, 320.7130, 160.6000, 320.2250.

Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements