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Although high-resistivity, low-loss silicon is an excellent material for THztransmission optics, its high refractive index necessitates antireflectiontreatment. We fabricated a wide-bandwidth, two-layer antireflection treatmentby cutting subwavelength structures into the silicon surface using multi-depthdeep reactive ion etching (DRIE). A wafer with this treatment on both sides has<-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bondingwafers introduces no reflection features above the -20 dB level, reproducingprevious work. Together these developments immediately enable construction ofwide-bandwidth silicon vacuum windows and represent two important steps towardgradient-index silicon optics with integral broadband antireflection treatment.

A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window