Photonic crystal bandedge membrane lasers on silicon

We report here the design and experimental demonstration of optically pumped photonic crystal bandedge membrane lasers on silicon-on-insulator (SOI) and on bulk silicon (Si) substrates, based on heterogeneously integrated InGaAsP multi-quantum-well membrane layers transfer printed onto patterned photonic crystal cavities. Single-mode lasing under room-temperature operation was observed at 1542 nm, with excellent side mode suppression ratio greater than 31.5 dB, for the laser built on SOI substrate. For the laser built on bulk Si substrate, single-mode lasing was also achieved at 1452 nm with much lower thermal resistance, as compared to that of the laser built on SOI substrates. Such improved thermal characteristics are favorable for lasers operating potentially at higher temperatures and higher power.