English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Silicon direct bonding offers flexibility in the design and development of Sioptics by allowing manufacturers to combine subcomponents with a potentiallylossless and mechanically stable interface. The bonding process presentschallenges in meeting the requirements for optical performance because air gapsat the Si interface cause large Fresnel reflections. Even small (35 nm) gapsreduce transmission through a direct bonded Si compound optic by 4% at $\lambda= 1.25 \; \mu$m at normal incidence. We describe a bond inspection method thatmakes use of precision slit spectroscopy to detect and measure gaps as small as14 nm. Our method compares low finesse Fabry-P\'{e}rot models to high precisionmeasurements of transmission as a function of wavelength. We demonstrate thevalidity of the approach by measuring bond gaps of known depths produced bymicrolithography.

Optical characterization of gaps in directly bonded Si compound optics using infrared spectroscopy