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An ultracompact bi-sectional adiabatic tapered coupler, which is suitable foran adiabatic mode transformation between a common single mode SOI wirewaveguide and a Si/III-V hybrid waveguide, are proposed for Si/III-Vheterogeneous integration. Since the bi-sectional tapered coupler mimics asemi-3D taper and avoids exciting the unwanted high-order modes in the thickp-InP cladding layer (which is removed in the first tapered section), thelength of the adiabatic mode coupler can be dramatically shortened. Taking intoaccount the mask design and the fabrication tolerance, we design the taperedstructure only in the III/V structure, while keeping the SOI wire waveguidestraight. In the proposed structure, the length of the bi-sectional taperedcoupler can be 9.5 {\mu}m with a large fundamental mode-coupling ratio (over95%) in a bandwidth of ~100 nm, and provides 100 nm tolerance to misalignment,even when the BCB layer is as thick as 50 nm.

Ultracompact Adiabatic Bi-sectional Tapered Coupler for the Si/III-V Heterogeneous Integration