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In this study, we present an all-optical reflection modulator for 2$\mu$mcommunication band exploiting a nano-gear-array metasurface and aphase-change-material Ge$_2$Sb$_2$Te$_5$ (GST). The reflectance of thestructure can be manipulated by altering the phase of GST by employing opticalstimuli. The paper shows details on the optical and opto-thermal modelingtechniques of GST. Numerical investigation reveals that the metastructureexhibits a conspicuous changeover from $\sim$ 99% absorption to very poorinteraction with the operating light depending on the switching states of theGST, ending up with 85\% modulation depth and only 0.58 dB insertion loss. Dueto noticeable differences in optical responses, we can demonstrate a highextinction ratio of 28 dB and a commendable FOM of 49, so far the bestmodulation performance in this wavelength window. In addition, real-timetracking of the reflectance during phase transition manifests high-speedswitching expending low energy per cycle, on the order of sub-nJ. Hence, givenits overall performance, the device will be a paradigm for the opticalmodulators for upcoming 2 $\mu$m communication technology.

TiN-GST-TiN All-Optical Reflection Modulator for 2 $\mu$m Waveband Reaching 85% Efficiency