Time Dependence of Transient Radiative Excess Carrier Lifetimes and Carriers Density in Indium Antimonide(InSb) Semiconductor in the Presence and Absence of Illumination

In this work, we models the optical generation and transient radiative recombination excess carrier lifetimes in direct band gap semiconductors Indium antimonide (Insb) during illumination and after switching off the illumination. The time dependence of excess carrier density and excess carrier lifetimes are determined by using the doping level 1017cm-3 and absorption rate 1:21x1024cm-3s-1. The transient mean times for each excess carrier lifetimes to reach their steady-state values and excess carrier lifetime are determined.