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Microstructure, phase evolution, and microwave dielectric properties of Li2O and Ga2O3 doped zinc orthosilicate having the composition of Zn1.9Si1.05O4, i.e. the Zn1.9-2xLixGaxSi1.05O4 system where x = 0.02 ~ 0.10, were investigated. LiGaSiO4 and ZnGa2O4 are observed as the secondary phase. The densification occurred by the liquid phase in the all specimens. The densification curves showed a sigmoidal shape. As the amount of Li2O and Ga2O3 increased, the temperature indicating the maximum value of bulk density in each composition decreased from 1250°C to 1100°C. The value of dielectric constant against the sintering temperature showed a similar tendency as that of the bulk density. The presence of the liquid phase and the insufficient grain growth may cause the deterioration of the quality factor. The dielectric constant and the quality factor of the specimen of x = 0.08 sintered at 1100°C were 6.28 and 27.097 GHz, respectively.

MICROSTRUCTURE, PHASE EVOLUTION, AND MICROWAVE DIELECTRIC PROPERTIES OF Li₂O AND Ga₂O ₃ DOPED ZINC ORTHOSILICATE