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Semiconductor detector fabrication technologies developed decades ago arewidely employed today to produce gamma-ray detectors from large volume, singlecrystals of high purity Ge (HPGe). Most all of these detectors are usedexclusively for spectroscopy measurements and are of simple designs with onlytwo impurity based electrical contacts produced with B implantation and Lidiffusion. Though these technologies work well for the simple spectroscopydetectors, the Li contact in particular is thick and lacks room temperaturestability in a manner that makes it inappropriate for many of the more complexdetectors needed for gamma-ray imaging and particle tracking applications. Thinfilms of amorphous semiconductors such as sputter deposited amorphous Ge (a-Ge)are the basis for an alternative electrical contact that is easy to fabricate,thin, and can be finely segmented. The a-Ge also functions well as apassivation coating on the HPGe surfaces not covered by the electricalcontacts. The properties of the a-Ge affect the performance of the resultantdetectors, and these properties substantially depend on and are controllablethrough the sputter deposition process parameters. The subject of this paper isthis interconnection of fabrication process parameters, a-Ge properties, anddetector performance. The properties of a-Ge thin film electrical resistance,a-Ge contact electron injection, and room temperature storage stability wereevaluated as a function of the sputter process parameters of sputter gaspressure and sputter gas H2 composition. Two different sputter depositionsystems were used to produce a-Ge resistors and HPGe detectors with a-Geelectrical contacts. These samples were electrically characterized as afunction of temperature. A summary of this study and discussion of therelevance of the findings to the optimization of detector performance are givenin this paper.

Optimization of Amorphous Germanium Electrical Contacts and Surface Coatings on High Purity Germanium Radiation Detectors