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Bridgman CdTe and CdZnTe crystal growth, with cadmium vapor pressure control,is applied to production of semiconductor gamma radiation detectors. Crystalsare highly donor doped and highly electrically conducting. Annealing intellurium vapors transforms them into a highly compensated state of highelectrical resistance and high sensitivity to gamma radiation. N-typedetectors, equipped with ohmic contacts, and a grounded guard ring around thepositive contact, are not sensitive to hole trapping. Conductivity control, bythe doping level, optimizes the detector operation by trade-off betweenelectrons' lifetime and electrical resistance. Gamma spectra of singledetectors and detector arrays are presented. Detector optimization and gammadetection mechanisms are discussed.

CdTe and CdZnTe Crystal Growth and Production of Gamma Radiation Detectors