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The comparative analysis of the influence of femtosecond laser radiation on the structure and conductivity of undoped and boron-doped amorphous hydrogenated silicon was made in this paper. It has been found that the process of nanocrystals formation in an amorphous matrix by femtosecond laser radiation for undoped amorphous hydrogenated silicon samples begins at lower laser energy densities than for doped samples. Different conductivity of undoped and doped samples of amorphous hydrogenated silicon before femtosecond radiation becomes approximately equal upon radiation with laser fluence of 150-160 mJ/ cm2.

Effect of Femtosecond Laser Radiation on the Structure and Conductivity of Boron Doped Amorphous Hydrogenated Silicon