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A simple process to fabricate 3 D microstructures on single crystal silicon is presented in this study. The area irradiated by focused ion beam (FIB) can be selectively etched in HF solution. Etching characteristics of irradiated area are studied. The etch rate of irradiated area increases with increasing dose over 3.4•~10-5C/cm2. In addition, it can be also controlled by accelerate voltage. Subsequently, it is etched by KOH solution in order to evaluate the mechanism of this phenomenon. Dependence of surface roughness on dot pitch is evaluated. Finally, 3 D microstructures can be fabricated based on these results, which indicates a possibility of industrial application as. a. novel 3 D micro-fabrication process.

nihon kikai gakkai ronbunshū. c

3D Micro-Fabrication using Combination Technique of Nano-scale Processing and Chemical Etching (3rd Report, Dependence of Enhanced Etching Effect on FIB Processing Conditions and Application to 3D Micro-Fabrication)