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In this work, the film thermal conductivity and the film-substrate interfacial thermal contact resistance of vertically-aligned single-walled carbon nanotube (VA-SWNT) films were measured with a proposed method utilizing temperature dependence of Raman spectrum. The proposed method harnesses the excitation laser power of the Raman spectroscopy to heat the VA-SWNT films synthesized on a silicon substrate by alcohol catalytic chemical vapor decomposition (ACCVD) method, and measures film temperature from the Raman spectrum. A relationship between the input laser heat and the measured temperature is modeled with a detailed heat conduction equation, and its numerical solutions were compared with the experimentally measured results to extract the film thermal conductivity and the film-substrate interfacial thermal contact resistance. The method found the thermal conductivity of the VA-SWNT film to be around 2 WmK and the film-substrate interfacial thermal contact resistance to be around 2×10 mKW. The obtained film thermal conductivity corresponds to the thermal conductivity equivalent of an individual SWNT of several tens of WmK. This value was more than an order of magnitude smaller than the values reported on individual SWNTs.

Heat Conduction Characteristics of Vertically Aligned Single-Walled Carbon Nanotubes Measured by Raman Spectroscopy