English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Long distance Optical Communications are affected by many problems; loss of signal is one of them. Erbium Doped Fiber Amplifier (EDFA) is the key to solve it. By using Semiconductor Laser as pumping source for EDFA, the signal can brought back the performed of EDFA into normal condition. EDFA has a good wavelength operation at 980nm & 1480nm, in that case Semiconductor Laser using InGaAs at 980nm & 1480nm is suitable for them. By using selected wavelength and materials, the Semiconductor Laser can be produced properly. Also, determining the parameter is the important things to construct the Laser. By using Rate Equation, the performed of Semiconductor Laser can obtained several result. Those are injection current as a function of voltage, carrier density, photon density and output power as a function of injection current.

Comparison of semiconductor lasers at wavelength 980nm & 1480nm using InGaAs for EDFA pumping scheme