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This paper presents the evaluation of heat generation behavior and related thermal measurement analysis of packaged high-power AlGaN/GaN high electron mobility transistors (HEMTs) cascaded with low-voltage MOSFET and SiC SBD. Since thermal management is extremely important for high power packaging, a hybrid integration of the GaN HEMTs onto a DBC substrate and metal case is proposed. We investigate the temperature performance of cascode GaN HEMTs by thermal simulations in comparison to the experimental results by using infrared thermography.

Thermal Behavior Investigation of Cascode GaN HEMTs