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With the development of semiconductor technology, how to locate and verify the problems found in chip testing becomes the key of the chip design. In the test of time difference measurement IP chip, test results find that the phase shift output does not correspond with the design requirements. After analyzing the circuit, the leakage current of refresh circuit is found. The FIB (Focused Ion Beam) technology is adopted to modify the physical circuit. The circuit is tested after FIB. The result shows that the judgement and analysis of the crux of the problem is correct. Through FIB, not only the problem is found, but also the function and performance of the chip are tested rapidly. The purpose of rapid verification is achieved, and the modification time is saved. Using FIB can help to reduce the cost of chip design sometimes. Introduction With the development of semiconductor technology, the scale and integration degree of semiconductor integrated circuit (IC) are increasing, and the complexity also increases, which make the designing and verification of IC more difficult, however the market time requires shorter. In an actual IC project, maybe we have resolved all problems during design and simulation, but some faults may appear when we test the IC, which are produced by foundry. This fatal result will influence on the market time of the products. In response to this situation, firstly we need to analysis the circuits of the IC and locate the sticking point, then we must verify the analysis results from physical circuits. In order to reduce time consumption and save research costs, a typical way of physical verification is the FIB (Focused Ion Beam) technology. FIB is that the ion beam produced by liquid metal ion source is accelerated by ion gun, and then focused on the sample. The surface produces a secondary electron signal to obtain an electron image, or a strong current ion beam is used to strip the surface atoms to complete the micro and nano surface processing, selective stripping of metal, silicon oxide or deposited metal layer. FIB is mainly used for the modifications of chip circuits. FIB technology can help designer to verify the design faster and more accurate, and adopting FIB to modify the chip can reduce the number of unsuccessful design changes and producing, shorten the R & D time and cycle [1]. In this paper, when testing the Time Difference Measurement (TDM) IP, the output result of Phase Shift (PS) is not our desire. Through analysis the circuits of the phase shift, we find the reason maybe the leakage current of the dynamic refresh circuit. So we need to adopt the FIB technology to modify the physical circuit of PS to verify the problem location [2]. Introduction of Time Difference Measurement IP The Time Difference Measurement (TDM) IP composes of Time to Digital Converter (TDC), Phase Shift (PS), and Controller unit. In the process of signal synchronization, when there is a time difference between the local signal and the reference signal, in order to realize the synchronization, it is necessary to shift the local signal, such as the signal synchronization of the atomic clock. A shift processing unit is needed to implement the local signal shift processing, in order to achieve the local

Analysis and Test of Time Difference Measurement IP Based on FIB