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A method for the high density conservation of critical current in VTSP second generation films is offered which is based on the temperature stepped raising during the formation of solid epitaxial VTSP films. This method allows inhibiting a growth of a-directed crystals at the formation of a superconducting layer up to 2 mkm thick.

naukoëmkie tehnologii v mašinostroenii

Temperature stepped raising during formation of solid epitaxial films of superconductors YBa2Cu3O7-x to increase current carrying capacity of VTSP second generation bands