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A series of highly perfect Al0.45 Ga0.55 As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7 x 10 13 -2 x 10 15 ions/cm 2 were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3 x 10 14 ions/cm2 . The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature. PACS numbers: 61.10.—i, 61.80.—x

Lattice Deformation in AlxGa1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions

Lattice Deformation in Al_xGa_1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions