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We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si0.8Ge0.2 quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n(s) can be controlled, in the range of (1.5-5.2) x 10(11) cm(-2). At a temperature T = 0.33 K, the Hall mobility is 4650 cm(2) V-1 s(-1) at the maximum carrier density. For lower sheet densities (n(s) < 2 x 10(11) cm(-2)) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Raas oscillation measurements we have extracted the hole effective masses m* = (0.25 --> 0.28)m(0) and the ratio of transport to quantum lifetimes alpha = (0.92 --> 0.85) for the corresponding carrier density change of n(s) = (5.2 --> 2.5) x 10(11) cm(-2). These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n(s), short range interface charge and interface roughness scattering.

Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface