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We report on photoreflectance investigations of strained-layer In0.2Ga0.8As/GaAs/Al0.3Ga0.7As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Delta n = 0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In0.2Ga0.8As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.

Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures