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Layers of Sn1-xMnxTe (x less than or equal to 0.1) with thickness 0.2-2 mu m were grown by molecular beam epitaxy on BaF2 substrates with a 0.01-1 mu m thick SnTe buffer layer. Both SnTe and Sn1-xMnxTe layers show metallic p-type conductivity with conducting hole concentrations (at T = 77 K) p(77) = 7 x 10(19) -2 x 10(21) cm(-3). The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T-C less than or equal to 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10(20) cm(-3)) and remain paramagnetic in the temperature range studied T = 4.5 divided by 70 K.

Electrical, Magnetic, and Structural Properties of Sn1-xMnxTe Layers Grown by Molecular Beam Epitaxy

Electrical, Magnetic, and Structural Properties of Sn_1-xMn_xTe Layers Grown by Molecular Beam Epitaxy