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a- and c-axis oriented YBa2Cu3Ox (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)(2)-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140 degrees C. The substrates were formed from a 14.5 x 14.5 x 13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of him growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.

Homoepitaxial Growth of YBa2Cu3O7on Single Crystal YBa2Cu3OxSubstrates

Homoepitaxial Growth of YBa₂Cu₃O₇on Single Crystal YBa₂Cu₃O_xSubstrates