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A new approach to structure perfection diagnostics of dislocation-free silicon crystals has been developed using the Bragg case of diffraction. The approach is being based on successive measurements of integral reflectivity and the spatial intensity distribution of reflected beam on the same diffraction planes of a real crystal by means of a single crystal diffractometer.

X-Ray Structure Perfection Diagnostics of Slightly Distorted Silicon Crystals in the Bragg Case of Diffraction