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Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AIN were studied by quantum molecular dynamics. C-N is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X(cation)-X(N) pairs is also discussed.

Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN