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The X-ray standing wave and Rutherford backscattering spectroscopy in channelling geometry were applied for the investigation of the structure of silicon single crystals implanted with 80 keV Fe ions. Both methods were used for the determination of crystal damage and lattice location of implanted metal atoms before and after thermal annealing. Both methods gave consistent results regarding the amorphization of Si due to the Fe-ion implantation. Moreover, using both methods some Fe substitution fraction was determined. The depth profiles of implanted atoms were compared to the results of computer simulations. Complementary use of X-ray standing wave and Rutherford backscattering spectroscopy channelling techniques for studies of radiation damage and lattice location of implanted atoms is discussed.

X-ray Standing Waves and Rutherford backscattering Studies of the Structure of Si Single Crystals Implanted with Fe Ions