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In this paper we discuss a possibility of an optical characterization of thin semiconductor epilayers by Raman scattering measurements. As an example zinc blende Cd1-xMnxTe epilayers (0.66 less than or equal to x less than or equal to 1.0) have been grown by molecular beam epitaxy method and investigated by Raman scattering and X-ray diffraction. Information resulting from both methods is compared and discussed.

Optical Characterization of MBE-Grown Cd1-xMnxTe Layers by Raman Spectroscopy

Optical Characterization of MBE-Grown Cd_1-xMn_xTe Layers by Raman Spectroscopy