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We report a systematic study of the temperature variation of the energy [E(0)(T)] and broadening parameter [Gamma(0)(T)] of the fundamental band gap of ZnSe in the range 27 K < T < 370 K using contactless electroreflectance. The obtained values of E(0)(T) and Gamma(0)(T) have been fit to various semi-empirical expressions to obtain information about the exciton-phonon coupling in this system. The experimentally determined E(0)(T) also is of significance for technological applications since it can be used to determine the operating temperature of ZnSe-based devices such as quantum well lasers.

Contactless Electroreflectance Study of Temperature Dependence of Fundamental Band Gap of ZnSe