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Electronic transport phenomena in molecular beam epitaxy grown silicon delta-doped AlGaAs/GaAs quantum wells and GaAs layers were investigated. Observations of the Shubnikov-de Baas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual subband mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated.

On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers