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In the studies of the metal-insulator transition (MIT) the control of a certain parameter, such as electron concentration n, or external conditions, such as magnetic field B, are of great importance. Unusual properties of diluted magnetic semiconductors (DMS), particularly the giant negative magnetoresistance, have made it possible to tune MIT by the magnetic field [1], and thus to examine quantitatively the behavior of transport phenomena in the vicinity of MIT critical point. The obtained results referred to the case of the high magnetic fields, in which electrons resided in one spin subband and Mn spins were spin polarized. With no doubt, the exploration of the critical region in DMS in the absence of the external magnetic field, as well as the study of 3D (B, n, σ) diagram of MIT would be equally important. Such an opportunity is offered by the recently discovered photomemory effect in some doped n-type II-VI semiconductors [3-5, 9]. This photomemory effect can serve as a tuning mechanism of the transition, as was demonstrated for GaAlAs [2]. Previous transport [3, 4] far infrared (FIR) absorption [4] and SQUID magnetization experiments [5] performed for In and Ga doped Cd1-xMnxΤe and Cd1xMn xTe1ySe y crystals on insulator side of MIT showed persistent increase in the concentration of shallow donors after illumination of the sample at low temperature. In the FIR experiment strong persistent increase in absorption due to impurity and optical hopping transitions, as well as the appearance of the electric-dipole

Light-Controlled Transport in Doped Diluted Magnetic Semiconductors near Localization Boundary