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Most recent results on doping of Si and III-V semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 10(18) cm-3 clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.

Implantation of Rare-Earth Atoms into Si and III-V Compounds