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The transformations between the normal and metastable state of EL2 in GaAs are investigated. We apply the internal friction technique as a probe for very small conductivities and discuss the changes in conductivity by the formation and recovery of EL2*. At 40 K both shallow acceptors and EL2 are photoquenched into neutral metastable states. The acceptors are likely to be associated with EL2* forming an electrically inactive state. We identify two damping peaks at 60 and 95 K with the regeneration of the acceptors and EL2 respectively. The latter indicates a regeneration via the charged defect (EL2)+