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Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and after neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P(Ga) introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P(Ga) and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than almost-equal-to 4 x 10(16) cm-2.

Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP