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The calculation results of the influence of interface state parameters on capacitance-voltage and conductance-voltage characteristics of n-GaAs metal insulator semiconductor structures are presented. The U-shaped distribution in the energy dimension and Gaussian-type distribution in the space dimension for insulator-semiconductor interface states are assumed.

acta physica polonica. a

Description of Electrical Characteristics of Semiconducting Compound-Insulator Interface on the Basis of the Model of Interface States Distributed in Energy and in Space