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The ultrathin high-purity single-crystal indium films with atomically flat surfaces and precisely known thicknesses in UHV conditions were prepared. These films were deposited on the Si(111)-(7 x 7) and Si(111)-(6 x 6)Au substrate cooled to temperatures up to 110 K. The growth of the indium films was studied by reflection high-energy electron diffraction (RHEED). Pronounced specular beam intensity oscillations are found. The consequences for the understanding of RHEED intensity oscillations and of the growth of ultrathin films are discussed. The amplitude of the RHEED specular beam intensity oscillations as a function of the polar angle and temperature substrate Si was measured.

RHEED Intensity Oscillations During the Growth of Indium Ultrathin Films