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Theoretical research suggests a emergence of the Majorana bound states at theends of the nanowires. Experimental verifications of said concept has alreadybeen executed, e.g., in superconductor/semiconductor nanowire devices whereinterplay between superconducting gap, spin-orbit coupling and externalmagnetic field allows for creation of zero-energy bound states. Recentexperiments propose a topological phase diagram by local modification of theeffective chemical potential. We discuss this possibility, using a model ofexperimental system in form of semi-infinite S/N junction. We calculate thezero--bias differential conductance $G$ in the case of the homogeneous system,as well as in the presence of the gate voltage. Relation between conductanceand the effective gap in the system is investigated. We show that $G$ canreproduce the topological phase diagram in magnetic field vs. gate voltagespace of parameters.

Majorana bound states and zero-bias conductance peaks in superconductor/semiconductor nanowire devices