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A method of reconstructing the actual depth profile of the mean positron lifetime obtained from the sequential chemical etching procedure has been proposed. In this procedure, the measured positron mean lifetime values as a function of depth are used to calculate the actual mean positron lifetime values at various depths. Two examples show the use of this method. The first one reconstructs the actual mean positron lifetime distribution in molybdenum subjected to friction. The second one reconstructs distribution in a silicon wafer irradiated with 167 MeV Xe26+ ions. These examples show this method's usefulness in detecting properties in subsurface zones generated by various surface treatments.

On the Reconstruction of the Mean Positron Lifetime Obtained from the Sequential Chemical Etching Procedure