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Dark-conductivity and photoconductivity properties of thermally evaporated Ga–In–Se (GIS) thin films were investigated in the temperature range of 80–430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400 ◦C to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 ×10−8 Ω−1 cm−1 for as-grown films and increased to 3.6 ×10−4 Ω−1 cm−1 for annealed films at 400 ◦C. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260–360 and 370–430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400 ◦C, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm.

Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films