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In this paper spin-on dopant diffusion has been investigated as a technique for fabrication of p/n monocrystalline silicon solar cell emitters. A homogeneous spreading onto the front wafer surface has been achieved by using 2 ml of boron-dopant solution and three-step spin-profile. Study of the wafers stacking arrangement has revealed that the highest doping level and the best emitter sheet resistance uniformity were obtained using the back-to-back wafers arrangement. The N2/O2 gas ratio variation during the diffusion process has shown that a higher percentage of nitrogen yields a slightly lower emitter sheet resistance. Study on temperature dependence of as-processed emitter resistivity revealed that 910 ◦C results in targeted sheet resistance of around 48 Ω/sq. Using these preliminary experimental results, a batch of 6 silicon wafers was processed. After BSG and BRL chemical removal, the batch average sheet resistance of the emitter was 49.50 Ω/sq. The uniformity of a wafer and of the batch was below 7% and 13%, respectively. The ECV and SIMS depth profiling have shown the electrically active and the total boron surface concentration of 1.5 × 10 atoms/cm and 2.5 × 10 atoms/cm, respectively. The junction depth was around 0.3 μm. Finally, by increasing the oxygen flow rate we reached an average sheet resistance of 51 Ω/sq. and a junction depth of 0.35 μm.

Magnetic Properties of Ni_{0.3}Zn_{0.7}Fe_2O_4 Ferrites with Iron Ions Partly Substituted by Europium