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The results of high-frequency dielectric measurements on obtained TlIn1−xErxSe2 single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps.

Synthesis, Roentgenophase Analysis and Physical Properties of TlIn1-xErxSe2Solid Solutions

Synthesis, Roentgenophase Analysis and Physical Properties of TlIn_1-xEr_xSe₂Solid Solutions